A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages-Reference-Cited by-同舟云学术

A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages

Published:2015-01-13 Issue:12 Volume:43 Page:2011-2024
ISSN:0098-9886
Container-title:International Journal of Circuit Theory and Applications
language:en
Short-container-title:Int. J. Circ. Theor. Appl.

Author:

Ebrahimi Behzad¹,Asadpour Reza¹,Afzali-Kusha Ali¹,Pedram Massoud²

Affiliation:

1. Nanoelectronics center of excellence, School of Electrical and Computer Engineering; University of Tehran; Tehran Iran

2. Department of EE-systems; University of Southern California; Los Angeles USA

Funder

Iranian National Science Foundation (INSF)

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/cta.2057/fullpdf

Reference40 articles.

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4. Zafar S et al A comparative study of NBTI and PBTI (charge trapping) in SiO2/HfO2 stacks with FUSI, TiN, Re gates . IEEE Symposium on VLSI Technology. Digest of Technical Papers, 2006 23 25

5. International Technology Roadmap for Semiconductors 2013 http://www.itrs.net/Links/2013ITRS/Home2013.htm

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