Themodynamic Approach to Diffusion-Controlled Epitaxial Silicon Deposition in Flow System from SiCl4 + H2 Mixtures-Reference-Cited by-同舟云学术

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Themodynamic Approach to Diffusion-Controlled Epitaxial Silicon Deposition in Flow System from SiCl4 + H2 Mixtures

Published:1972 Issue:9 Volume:7 Page:981-997
ISSN:0023-4753
Container-title:Kristall und Technik
language:de
Short-container-title:Krist. Techn.

Author:

Riedl W. J.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry,Pharmacology (medical),Complementary and alternative medicine,Pharmaceutical Science

Reference54 articles.

1. , : A Continuous Procedure for Growing Epitaxial Silicon Films in L. Steipe, Mikroelektronik, München—Wien 1967

2. Studies in Diffusion

3. Low-Temperature Epitaxial Growth of Si (Inverted Transport in Close-Spaced Technique)

4. The Effects of Gas Pressure and Velocity on Epitaxial Silicon Deposition by the Hydrogen Reduction of Chlorosilanes†

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transition product model of the CVD process;Ceramics International;1987-01

2. Model of silicon epitaxial growth in SiCl4-HCl-H2 system based on flow graph;Journal of Crystal Growth;1979-03

3. Surface morphology of HCl etched silicon wafers;Journal of Crystal Growth;1977-11

4. Growth and etching of silicon in chemical vapour deposition systems; The influence of thermal diffusion and temperature gradient;Journal of Crystal Growth;1975-12

5. GROWTH AND ETCHING OF SILICON IN CHEMICAL VAPOUR DEPOSITION SYSTEMS; THE INFLUENCE OF THERMAL DIFFUSION AND TEMPERATURE GRADIENT;Vapour Growth and Epitaxy;1975

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