Epitaxial growth and electrical properties of GaN-AlN solid solutions

Author:

Baranov B.,Neumann H.,Ernst H.-G.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry,Pharmacology (medical),Complementary and alternative medicine,Pharmaceutical Science

Reference12 articles.

1. Epitaxial growth of aluminum nitride

2. ; Intern. Autumn School Semicond. Optoelectronics, Cetniewo 1975, to be publ.

3. Vapor epitaxy of gallium nitride

4. , ; Proc. Conf. Mixed Crystals '75, Reinhardsbrunn 1975, p. 119

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. GaN, AlN, and InN: A review;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-07

2. The “Urbach” absorption edge in ALN;Czechoslovak Journal of Physics;1980-05

3. Growth and properties of AlxGa1–xN epitaxial layers;Physica Status Solidi (a);1978-10-16

4. Electrical properties of n-Type GaN;Kristall und Technik;1977

5. Al(x)Ga(1-x)N, physical data;Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties

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