Author:
Baranov B.,Neumann H.,Ernst H.-G.
Subject
Condensed Matter Physics,General Materials Science,General Chemistry,Pharmacology (medical),Complementary and alternative medicine,Pharmaceutical Science
Reference12 articles.
1. Epitaxial growth of aluminum nitride
2. ; Intern. Autumn School Semicond. Optoelectronics, Cetniewo 1975, to be publ.
3. Vapor epitaxy of gallium nitride
4. , ; Proc. Conf. Mixed Crystals '75, Reinhardsbrunn 1975, p. 119
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1. GaN, AlN, and InN: A review;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-07
2. The “Urbach” absorption edge in ALN;Czechoslovak Journal of Physics;1980-05
3. Growth and properties of AlxGa1–xN epitaxial layers;Physica Status Solidi (a);1978-10-16
4. Electrical properties of n-Type GaN;Kristall und Technik;1977
5. Al(x)Ga(1-x)N, physical data;Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties