Dislocation density in InxGa1–xAs films grown on GaAs substrates with intermediate buffer layer InGaAsP of variable composition-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Dislocation density in InxGa1–xAs films grown on GaAs substrates with intermediate buffer layer InGaAsP of variable composition

Published:1979 Issue:4 Volume:14 Page:399-408
ISSN:0023-4753
Container-title:Kristall und Technik
language:de
Short-container-title:Krist. Techn.

Author:

Bolchovityanov J. B.,Bolchovityanova R. I.,Yudaev V. I.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry,Pharmacology (medical),Complementary and alternative medicine,Pharmaceutical Science

Reference12 articles.

1. Limitations on stress compensation in AlxGa1 −xAs1−yPy–GaAs LPE layers

2. , , , : in: Gallium Arsenide and Related Compounds, The Institute of Physics, Bristol, London 1972, pp. 48–54

3. Investigation of InxGa1−xAs films grown from thin solution layer

4. Stress compensation in GaAs–Al0.24 Ga0.76 As1−y Py LPE binary layers

5. Pulsed room‐temperature operation of In1−xGaxP1−zAszdouble heterojunction lasers at high energy (6470 Å, 1.916 eV)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The initial stages of heteroepitaxy from the liquid phase at a low misfit: InGaAsP on GaAs;Thin Solid Films;1986-03

2. Effect of buffer layers on the dislocation structure of heteroepitaxial systems;Kristall und Technik;1981

3. Investigation of GaAs—InyGa1−yPzAs1−z–InxGa1−x-As grading heterojunctions formation;Kristall und Technik;1980

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP