P‐1.2: All‐Oxide Thin‐Film Transistors for Low‐Voltage‐Operation Circuits-Reference-Cited by-同舟云学术

P‐1.2: All‐Oxide Thin‐Film Transistors for Low‐Voltage‐Operation Circuits

Published:2021-08 Issue:S2 Volume:52 Page:688-691
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Deng Sunbin¹,Chen Rongsheng¹²,Xu Yuming²,Zhong Wei²,Dong Shou-Cheng¹³,Li Guijun¹⁴,Zhang Meng¹⁵,Yeung Fion Sze Yan¹,Wong Man¹,Kwok Hoi-Sing¹

Affiliation:

1. State Key Laboratory of Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong SAR

2. School of Microelectronics South China University of Technology Guangzhou China

3. Institute for Advanced Study The Hong Kong University of Science and Technology Hong Kong SAR

4. College of physics and Optoelectronic Engineering Shenzhen University Shenzhen China

5. Institute of Microscale Optoelectronics Shenzhen University Shenzhen China

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.15250

Reference13 articles.

1. 39‐3: Invited Paper: LTPO TFT Technology for AMOLEDs †

2. Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric

3. High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO2Gate Dielectric

4. Low-Voltage IGZO TFTs Using Solution-Deposited OTS-Modified Ta2O5 Dielectric

5. Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO₂ Gate Dielectric

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