P‐1.9: Optimization of InSnZnO Thin‐Film Transistors Based on Ultra‐Low‐Temperature Annealing Process-Reference-Cited by-同舟云学术

P‐1.9: Optimization of InSnZnO Thin‐Film Transistors Based on Ultra‐Low‐Temperature Annealing Process

Published:2023-04 Issue:S1 Volume:54 Page:464-467
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Wan Yunhao¹,Chen Zhiying²,Huang Jinyang¹,Xu Xindi¹,Zhao Yuwei¹,Jiang Zhendong³,Zhang Meng³

Affiliation:

1. Institute of Microscale Optoelectronics (IMO), Shenzhen University Shenzhen China

2. School of Electrical and Electronic Engineering, Nanyang Technological University Singapore

3. College of Electronics and Information Engineering, Shenzhen University Shenzhen China

Abstract

The application of metal oxide thin‐film transistors (TFTs) in the field of flexible displays is particularly constrained by the critical fabrication process temperature. In this work, InSnZnO (ITZO) TFTs are optimized based on an ultra‐low‐temperature annealing process. When the annealing temperature and time are respectively set to 100 ° C and 560 h, ITZO TFTs exhibit decent device electrical characteristics with field‐effect mobility of ~14.59 cm2V‒1s‒1, subthreshold swing of ~0.39 mV/dec, and on/off current ratio of ~7.12 × 108. The test results provide the experimental basis of ITZO TFTs for further flexible applications.

Publisher

Wiley

Subject

General Medicine

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