The Effect of Crucible Rotation and Crucible Size in Top-Seeded Solution Growth of Single-Crystal Silicon Carbide-Reference-Cited by-同舟云学术

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The Effect of Crucible Rotation and Crucible Size in Top-Seeded Solution Growth of Single-Crystal Silicon Carbide

Published:2019-03-25 Issue:5 Volume:54 Page:1900014
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Horiuchi Takashi¹,Wang Lei¹,Sekimoto Atsushi¹^ORCID,Okano Yasunori¹,Yamamoto Takuya²^ORCID,Ujihara Toru³,Dost Sadik⁴

Affiliation:

1. Department of Materials Engineering Science; Osaka University; Toyonaka Osaka 560-8531 Japan

2. Department of Material Process for Circulatory Society; Tohoku University; Sendai Miyagi 980-8579 Japan

3. Department of Materials Science; Nagoya University; Chikusa-ku Nagoya 464-8603 Japan

4. Crystal Growth Laboratory; University of Victoria; Victoria BC V8W 3P6 Canada

Funder

Research Institute for Information Technology

Kyushu University

Collaborative Research Program for Young Women Scientists provided by Academic Center for Computing and Media Studies

Kyoto University

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/crat.201900014/fullpdf

Reference22 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. The status of SiC bulk growth from an industrial point of view

3. Evaluation of 4H-SiC Thermal Oxide Reliability Using Area-Scaling Method

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of solution height and crystal rotation on the solution flow behavior in the top-seeded solution growth of SiC single crystals;CrystEngComm;2024

2. Optimization of Carbon Transport in Top-Seeded Solution Growth of Al-Doped Sic;2024

3. Effects of crystal rotation on the carbon transport in the top-seeded solution growth of SiC single crystal;Journal of Crystal Growth;2023-04

4. Review of solution growth techniques for 4H-SiC single crystal;China Foundry;2023-03

5. A review of the simulation studies on the bulk growth of silicon carbide single crystals;Journal of the Korean Ceramic Society;2022-02-18

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