The Effect of Crucible Rotation and Crucible Size in Top-Seeded Solution Growth of Single-Crystal Silicon Carbide-Reference-Cited by-同舟云学术

The Effect of Crucible Rotation and Crucible Size in Top-Seeded Solution Growth of Single-Crystal Silicon Carbide

Author:

Horiuchi Takashi¹,Wang Lei¹,Sekimoto Atsushi¹^ORCID,Okano Yasunori¹,Yamamoto Takuya²^ORCID,Ujihara Toru³,Dost Sadik⁴

Affiliation:

1. Department of Materials Engineering Science; Osaka University; Toyonaka Osaka 560-8531 Japan

2. Department of Material Process for Circulatory Society; Tohoku University; Sendai Miyagi 980-8579 Japan

3. Department of Materials Science; Nagoya University; Chikusa-ku Nagoya 464-8603 Japan

4. Crystal Growth Laboratory; University of Victoria; Victoria BC V8W 3P6 Canada

Funder

Research Institute for Information Technology

Kyushu University

Collaborative Research Program for Young Women Scientists provided by Academic Center for Computing and Media Studies

Kyoto University

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

Reference22 articles.

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