Industrial growth and characterization of Si-doped GaAs crystal by a novel multi-crucible Bridgman method
Author:
Affiliation:
1. Institute of Crystal Growth; School of Materials Science and Engineering; Shanghai Institute of Technology; Shanghai 201418 P R China
2. Kunshan Dingjing Gallium Crystal Material CO. LTD; Kunshan 215300 P R China
Funder
talent plan of Jiangsu province
Natural Science Foundation of Shanghai
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/crat.201700052/fullpdf
Reference25 articles.
1. Growth of SiC single crystals on patterned seeds by a sublimation method
2. A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes
3. Dramatic reduction of dislocations on a GaN point seed crystal by coalescence of bunched steps during Na-flux growth
4. The role of an SiC interlayer at a graphite–silicon liquid interface in the solution growth of SiC crystals
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