Growth of SiC single crystals on patterned seeds by a sublimation method-Reference-Cited by-同舟云学术

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Growth of SiC single crystals on patterned seeds by a sublimation method

Published:2016-04 Issue: Volume:439 Page:7-12
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yang Xianglong,Chen Xiufang,Peng Yan,Xu Xiangang,Hu Xiaobo

Funder

High-Tech Research and Development Program of China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Progress in silicon carbide semiconductor electronics technology

2. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

3. Recent developments in SiC single-crystal electronics

4. General principles of growing large-size single crystals of various silicon carbide polytypes

5. Defect Status in SiC Manufacturing

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research progress of large size SiC single crystal materials and devices;Light: Science & Applications;2023-01-24

2. Selective-area lateral epitaxial overgrowth of SiC by controlling the supersaturation in sublimation growth;CrystEngComm;2018

3. Industrial growth and characterization of Si-doped GaAs crystal by a novel multi-crucible Bridgman method;Crystal Research and Technology;2017-05-18

4. New process of silicon carbide purification intended for silicon passivation;Superlattices and Microstructures;2017-01

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