Pore Wall Thinning of Mesoporous 4H-SiC by Sacrificial Oxidation-Reference-Cited by-同舟云学术

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Pore Wall Thinning of Mesoporous 4H-SiC by Sacrificial Oxidation

Published:2018-08-21 Issue:9 Volume:53 Page:1800120
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Rashid Marzaini¹^ORCID,Idris Muhammad Idzdihar²³^ORCID,Horrocks Benjamin Richard⁴^ORCID,Healy Noel³,Goss Jonathan Paul³^ORCID,Horsfall Alton Barrett⁵

Affiliation:

1. School of Physics; Universiti Sains Malaysia; 11800 USM Penang Malaysia

2. Faculty of Electronic and Computer Engineering; Universiti Teknikal Malaysia Melaka; Hang Tuah Jaya 76100 Durian Tunggal Melaka Malaysia

3. School of Engineering; Newcastle University; Newcastle Upon Tyne NE1 7RU United Kingdom

4. School of Natural Environmental Sciences; Newcastle University; Newcastle Upon Tyne NE1 7RU United Kingdom

5. Department of Engineering; University of Durham; Durham DH1 3LE United Kingdom

Funder

Ministry of Higher Education, Malaysia

Universiti Sains Malaysia

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/crat.201800120/fullpdf

Reference25 articles.

1. Nanotechnology Research Directions: IWGN Workshop Report

2. Charge-extraction strategies for colloidal quantum dot photovoltaics

3. Colloidal Quantum Dot Optoelectronics and Photovoltaics

4. Experimental Evidence for the Quantum Confinement Effect in 3C-SiC Nanocrystallites

5. Fabrication and photoluminescence of SiC quantum dots stemming from 3C, 6H, and 4H polytypes of bulk SiC

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Image analysis development for optimization of 4H–SiC trench recovery treatment by combination of gas etching and sacrificial oxidation approaches;Materials Science in Semiconductor Processing;2024-05

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