Fabrication and photoluminescence of SiC quantum dots stemming from 3C, 6H, and 4H polytypes of bulk SiC
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4755778
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1. Silicon Carbide as a Platform for Power Electronics
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3. Silicon carbide UV photodiodes
4. Room temperature coherent control of defect spin qubits in silicon carbide
5. Defect-Induced Magnetism in Neutron Irradiated 6H-SiC Single Crystals
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