Scanning transmission electron microscopy measurement of bismuth segregation in thin Ga(As,Bi) layers grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Scanning transmission electron microscopy measurement of bismuth segregation in thin Ga(As,Bi) layers grown by molecular beam epitaxy

Published:2014-07-03 Issue:1 Volume:50 Page:38-42
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Walther Thomas¹²,Richards Robert D.²,Bastiman Faebian²³

Affiliation:

1. Kroto Centre for High-Resolution Imaging & Analysis; Department of Electronic & Electrical Engineering; University of Sheffield; Mappin Street Sheffield S1 3JD UK

2. Semiconductor Materials & Devices Group; Department of Electronic & Electrical Engineering; University of Sheffield; Mappin Street Sheffield S1 3JD UK

3. now at: Paul-Drude-Institute; Hausvogteiplatz 5-7 10117 Berlin Germany

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference17 articles.

1. Band gap of GaAs1−xBix, 0

2. Sb-surface segregation and the control of compositional abruptness at the interface

3. GaAsBi atomic surface order and interfacial roughness observed by STM and TEM

4. Configuring a 300kV cold field-emission gun for optimum analytical performance

5. Z-contrast stem for materials science

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