High-Quality GaSb and GaInSb Crystals Prepared by Vertical Bridgman Method
Author:
Affiliation:
1. School of Materials Science and Engineering; Tianjin Polytechnic University; Tianjin 300387 China
2. School of Materials Science and Engineering; Shandong University of Technology; Shandong 255049 China
Funder
National Natural Science Foundation of China
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference22 articles.
1. Experimental analysis of Mn segregation in Bridgman-grown gallium antimonide: Dependency on the ampoule radius
2. D. Z. Ting S. D. Gunapala A. Soibel J. Nguyen A. Khoshakhlagh
3. Bulk growth of gallium antimonide crystals by Bridgman method
4. Bulk Crystal Growth of Ternary III–V Semiconductors
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1. Effect of rotating magnetic field intensity on structure and electrical and optical properties of GaInSb crystal grown with travelling heater method;Semiconductor Science and Technology;2023-02-07
2. Effect of temperature gradient on microstructure and properties of GaSb crystals grown with Bridgman method;Materials Research Express;2020-05-01
3. Effect of rotating magnetic field on temperature field and flow field of Ga1−x In x Sb crystal growth with traveling heater method;Japanese Journal of Applied Physics;2020-04-29
4. Effects of rotating magnetic field on the microstructure and properties of a GaInSb crystal;Vacuum;2020-04
5. Improvement of GaInSb crystal quality by rotating magnetic field;Journal of Materials Science: Materials in Electronics;2019-08
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