Growth and characterization of heavily doped silicon crystals
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/crat.201000604/fullpdf
Reference22 articles.
1. Constitutional supercooling surface roughening
2. Heavily Boron-Doped Silicon Single Crystal Growth: Constitutional Supercooling
3. The accuracy of the standard resistivity-concentration conversion practice estimated by measuring the segregation coefficient of boron and phosphorous in Cz-Si
4. Antimony Concentration Limitation in Dislocation-Free CZ Silicon Crystals
5. Defect Formation in Heavily As-Doped Cz Si
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1. Properties of silicon crystals;Handbook of Silicon Based MEMS Materials and Technologies;2020
2. Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method;Journal of Crystal Growth;2018-06
3. Dislocation formation in heavily As-doped Czochralski grown silicon;Crystal Research and Technology;2017-04-24
4. Properties of Silicon Crystals;Handbook of Silicon Based MEMS Materials and Technologies;2015
5. Czochralski Growth of Silicon Crystals;Handbook of Crystal Growth;2015
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