Anisotropic Microsegregation in the Growth of Doped III-V-Semiconductors from Solution-Reference-Cited by-同舟云学术

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Anisotropic Microsegregation in the Growth of Doped III-V-Semiconductors from Solution

Published:2018-04-24 Issue:5 Volume:53 Page:1700264
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Danilewsky Andreas N.¹,Meinhardt Jens²,Boschert Stefan³,Bischopink Georg⁴

Affiliation:

1. Kristallographie; Albert-Ludwigs-Universität Freiburg; Hermann-Herder-Str. 5 79104 Freiburg Germany

2. Sebastian-Kneipp-Str. 8 79104 Freiburg Germany

3. Siemens AG; Corporate Technology; Otto-Hahn-Ring 6 81739 München Germany

4. Robert Bosch GmbH; Automotive Electronics; Tübinger Str. 123 72762 Reutlingen Germany

Funder

Bundesministerium für Bildung und Forschung

Deutsches Zentrum für Luft- und Raumfahrt

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference37 articles.

1. F. Rosenberger Fundamentals of Crystal Growth I, Springer Series in Solid-State Sciences 3 2nd M. Cardona P. Fulde H.-J. Queisser Springer Berlin Heidelberg, New York, Tokyo 1991

2. Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC

3. The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC

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