Enhanced Terahertz detection in self-switching diodes

Author:

Iñiguez-de-la-Torre I.,Mateos J.,Pardo D.,Song A. M.,González T.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Reference18 articles.

1. Plasma wave oscillations in nanometer field effect transistors for terahertz detection and emission;Knap;Journal of Physics: Condensed Matter,2008

2. Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors;El Fatimy;Applied Physics Letters,2006

3. Voltage tuneable terahertz emission from a ballistic nanometer InGaAs/InAlAs transistor;Łusakowski;Journal of Applied Physics,2005

4. Free-carrier grating and terahertz generation from InN n+nn+ structures under treaming plasma instability;Gruzinskis;Semiconductor Science and Technology,2004

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1. Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes;2021 13th Spanish Conference on Electron Devices (CDE);2021-06-09

2. A unipolar nano-diode detector with improved performance using the high-k material SiN x;Semiconductor Science and Technology;2018-10-19

3. Nanochannel diodes based on InAs/Al80Ga20Sb heterostructures: Fabrication and zero-bias detector properties;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-03

4. Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors;Solid-State Electronics;2015-02

5. On the effect of δ-doping in self-switching diodes;Applied Physics Letters;2014-09

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