Influence of Interface Modification on Photoelectrochemical Behaviour of Amorphous Hydrogenated Silicon in Aqueous Electrolytes
Author:
Publisher
Wiley
Subject
General Chemical Engineering
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/bbpc.198800324/fullpdf
Reference16 articles.
1. Oxide optimization at thep‐Si/aqueous electrolyte interface
2. Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces
3. B. R. Weinberger H. W. Deckman E. Yablonovitch T. Gmitter W. Kobasz G. Garoff J. Vac. Sci. Technol. A3 887 1985
4. In‐Situ Interface Conditioning at Amorphous Silicon/Aqueous Electrolyte Junctions
5. Transient Photoconductivity Profiles of Electrochemical Interfaces: The a‐Si:H Aqueous Electrolyte Contact
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Surface states and Fermi level pinning at semiconductor/ electrolyte junctions;Journal of Electroanalytical Chemistry;1993-09
2. Anodic oxides on silicon;Electrochimica Acta;1992-04
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