Effect of Pits in InGaN/GaN Multi-Quantum Wells on the Strain and In Composition Segregation-Reference-Cited by-同舟云学术

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Effect of Pits in InGaN/GaN Multi-Quantum Wells on the Strain and In Composition Segregation

Published:2000-07 Issue:1 Volume:180 Page:81-84
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Yang Z.J.,Tong Y.Z.,Zhang G.Y.,Du X.L.,Fujii N.,Jia A.W.,Yoshikawa A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Pit formation in GaInN quantum wells

2. Study of open-core dislocations in GaN films on (0001) sapphire

3. Cathodoluminescence of AlN–GaN short period superlattices

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Invariable optical properties of phosphor-free white light-emitting diode under electrical stress;Chinese Physics B;2010-10

2. Optimization of GaN Barriers During the Growth of InGaN/GaN Quantum Wells at Low Temperature;MRS Proceedings;2008

3. InGaN/GaN MQW high brightness LED grown by MOCVD;Optical Materials;2003-07

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