DC and RF /analog parameters in Ge‐source split drain ‐ZHP‐TFET : Drain and pocket engineering technique-Reference-Cited by-同舟云学术

DC and RF /analog parameters in Ge‐source split drain ‐ZHP‐TFET : Drain and pocket engineering technique

Published:2021-10-19 Issue: Volume: Page:
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numer Model

Author:

Saha Rajesh¹^ORCID,Panda Deepak Kumar²,Goswami Rupam³^ORCID,Bhowmick Brinda⁴,Baishya Srimanta⁴

Affiliation:

1. Department of Electronics and Communication Engineering Malaviya National Institute of Technology Jaipur India

2. School of Electronics VIT AP University Amaravati India

3. Department of ECE Tezpur University Tezpur India

4. Department of Electronics and Communication Engineering National Institute of Technology Silchar India

Funder

Science and Engineering Research Board

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

Reference42 articles.

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