P‐2: Effect of Buffer Layer on Performance and Reliability of Flexible a‐IGZO TFTs Fabricated on Colorless Polyimide of G4.5
Author:
Affiliation:
1. School of Electronic and Computer EngineeringPeking University Shenzhen 518055 China
2. China Star Optoelectronics Semiconductor Display Technology Co., Ltd Shenzhen 518132 China
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.13151
Reference10 articles.
1. Large-Scale Integration of Semiconductor Nanowires for High-Performance Flexible Electronics
2. Materials and Mechanics for Stretchable Electronics
3. Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor
4. All-sputtered, flexible, bottom-gate IGZO/Al2O3 bi-layer thin film transistors on PEN fabricated by a fully room temperature process
5. The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates
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