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AlGaN/GaN HEMTs on SiC and Si substrates: A review from the small-signal-modeling's perspective

  • Published:2013-08-27 Issue:3 Volume:24 Page:389-400
  • ISSN:1096-4290
  • Container-title:International Journal of RF and Microwave Computer-Aided Engineering
  • language:en
  • Short-container-title:Int J RF and Microwave Comp Aid Eng

Author:

Jarndal Anwar1

Affiliation:

1. Department of Electrical and Computer Engineering; University of Sharjah; 27272 Sharjah UAE

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Reference19 articles.

1. GaN-based RF power devices and amplifiers;Mishra;Proc IEEE,2008

2. AlGaN/GaN HEMTs-An overview of device operation and applications;Mishra;Proc IEEE,2002

3. AlGaN/GaN high electron mobility transistors on Si(111) substrates;Chumbes;IEEE Trans Electron Dev,2001

4. AlGaN/GaN epitaxy and technology;Waltereita;Int J Microwave Wireless Technol,2010

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1. Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-07

2. RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si;International Journal of Microwave and Wireless Technologies;2023-03-20

3. Impact of Field-Plate Structure on Parasitic Effects in GaN Based Transistor;2023 Advances in Science and Engineering Technology International Conferences (ASET);2023-02-20

4. Employing simplified resistance–inductance–capacitance equivalent circuits to analyze and confirm a gallium nitride‐based current linear regulator for laser diode controls;International Journal of Circuit Theory and Applications;2022-07-15

5. Simulation and implementation of a two‐mode‐operation transconductance regulator with a Gallium Nitride High‐Electron‐Mobility Transistor;International Journal of Circuit Theory and Applications;2021-09-28
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