Straightforward modeling of dynamic I-V characteristics for microwave FETs

Author:

Avolio Gustavo1,Schreurs Dominique M. M.-P.1,Raffo Antonio2,Crupi Giovanni3,Caddemi Alina3,Vannini Giorgio2,Nauwelaers B.1

Affiliation:

1. Department of Electronic Engineering; KU Leuven; Leuven B-3001 Belgium

2. Department of Engineering; University of Ferrara; Ferrara 44100 Italy

3. Dipartimento di Fisica della Materia e Ingegneria Elettronica; University of Messina; Messina 98166 Italy

Funder

FWO Vlaanderen and KU Leuven GOA

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Reference18 articles.

1. Large-signal network analysis including the baseband;Pailloncy;IEEE Microwave Mag,2011

2. Direct nonlinear power MESFET parameter extraction and consistent modeling;Werthof;IEEE MTT-S Int Microwave Symp Digest,1993

3. Direct extraction of nonlinear FET Q-V functions from time domain large signal measurements;Curras-Francos;IEEE Microwave Guid Wave Lett,2000

4. Straightforward and accurate nonlinear device model parameter-estimation method based on vectorial large-signal measurements;Schreurs;IEEE Trans Microwave Theory Tech,2002

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