An improved millimeter-wave small-signal modeling approach for HEMTs-Reference-Cited by-同舟云学术

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An improved millimeter-wave small-signal modeling approach for HEMTs

Published:2013-10-31 Issue:4 Volume:24 Page:464-469
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF and Microwave Comp Aid Eng

Author:

Shen Li¹,Chen Bo¹,Gao Jianjun¹

Affiliation:

1. School of Information and Science Technology, East China Normal University; Shanghai 200241 People's Republic of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/mmce.20787/fullpdf

Reference16 articles.

1. Scalable equivalent circuit FET model for MMIC design identified through FW-EM analyses;Resca;IEEE Trans Microwave Theory Tech,2009

2. A new small-signal modeling approach applied to GaN devices;Jarndal;IEEE Trans Microwave Theory Tech,2005

3. Analytical extraction of extrinsic and intrinsic FET parameters;Ooi;IEEE Trans Microwave Theory Tech,2009

4. Pad modeling by using artificial neural network;Li;Prog Electromagn Res,2007

5. Direct determination of the bias-dependent series parasitic elements in SiC MESFETs;Manohar;IEEE Trans Microwave Theory Tech,2003

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental insight into the temperature effects on DC and microwave characteristics for a GaAs pHEMT in multilayer 3‐D MMIC technology;International Journal of RF and Microwave Computer-Aided Engineering;2020-08-03

2. A de‐embedding method with matrix rectification and influences of residual errors on model parameters extraction of InP HEMTs;International Journal of RF and Microwave Computer-Aided Engineering;2020-03-26

3. A review on the artificial neural network applications for small‐signal modeling of microwave FETs;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-08-06

4. Microwave frequency small-signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT;International Journal of RF and Microwave Computer-Aided Engineering;2017-09-17

5. Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method;Chinese Physics B;2016-11

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