Affiliation:
1. Department of Chemistry National Taiwan University Taipei 106 Taiwan
2. College of Materials and Energy South China Agricultural University Guangzhou 510642 P. R. China
3. Lextar Electronics Corporation Hsinchu 300 Taiwan
4. Department of Materials Science and Engineering National Yang Ming Chiao Tung University Hsinchu 300 Taiwan
Abstract
AbstractPerovskite quantum dots usually possess excellent optical properties, such as high color purity, high photoluminescence quantum yield, and tunable emission wavelength. However, their relatively low stability against heat, water, oxygen, and light hinders their practical applications in the field of optoelectronic devices. Herein, melt‐quenching and heat treatment crystallization methods are used to fabricate the CsPbBr3@glass. Atomic layer deposition and the sol–gel method are applied to encapsulate the CsPbBr3@glass with a dense SiO2 layer and hydrophobic SiO2 layer, respectively, to further improve the water resistance, thermal reversibility of photoluminescence, and photostability. The CsPbBr3@glass@ASG can be synthesized with the triple layer encapsulation of the glass matrix, dense SiO2 layer, and hydrophobic SiO2 layer. During the water resistance test for seven weeks, CsPbBr3@glass@ASG can preserve ≈100% of initial PL intensity. Similarly, it can preserve ≈100% of PL intensity after five continuous heating–cooling cycles between 30 and 100 °C. In addition, the internal and external quantum efficiencies of CsPbBr3@glass@ASG can still be maintained at 42.0% and 33.7%, respectively. Results indicate that CsPbBr3@glass@ASG can provide a balance between optical properties and extrinsic stability successfully, thereby becoming a potential candidate material for practical applications related to optoelectronic devices in the future.
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials