Efficient and Stable Gd3Ga5O12:Cr3+ Phosphors for High‐Performance NIR LEDs-Reference-Cited by-同舟云学术

Efficient and Stable Gd₃Ga₅O₁₂:Cr³⁺ Phosphors for High‐Performance NIR LEDs

Published:2023-06-07 Issue:21 Volume:11 Page:
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Jin Chen¹²,Li Ruiyang¹,Liu Yongfu¹^ORCID,Zhang Liangliang³,Zhang Jiahua³,Sun Peng¹,Luo Zhaohua¹,Jiang Jun¹^ORCID

Affiliation:

1. Ningbo Institute of Materials Technology & Engineering Chinese Academy of Sciences Ningbo 315201 P. R. China

2. College of Chemical Engineering Zhejiang University of Technology Hangzhou 310014 P. R. China

3. State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 P. R. China

Abstract

AbstractCr3+‐activated Gd3Ga5O12 garnet (GGG:Cr3+) near‐infrared (NIR) phosphors have shown promising applications in regulating plant growth. However, the low external quantum efficiency (EQE) results in a wall‐plug efficiency (WPE) of phosphor‐converted light‐emitting diodes (pc)‐LEDs of only ≈15%. Herein, an easy strategy to improve the luminescent properties of the GGG:Cr3+ phosphor is reported. Through optimization of the synthesized technology, the EQE is enhanced to 43.6%. Remarkably, the fabricated pc‐LEDs achieve a WPE as high as 34.3%. These results demonstrate a significant advancement in the development and applications of NIR phosphor materials and NIR pc‐LED devices.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Ningbo

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.202300772

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