Affiliation:
1. Key Laboratory of Eco‐chemical Engineering Ministry of Education College of Chemistry and Molecular Engineering Qingdao University of Science & Technology Qingdao 266042 China
2. College of Sino‐German Science and Technology Qingdao University of Science & Technology Qingdao 266042 China
3. Shandong Engineering Research Center for Marine Environment Corrosion and Safety Protection College of Environment and Safety Engineering Qingdao University of Science and Technology Qingdao 266042 China
Abstract
AbstractGraphitic carbon nitride (g‐C3N4), as a non‐metallic two‐dimensional semiconductor material, has the advantages of low‐cost, simple synthesis, excellent chemical and thermal stability, etc. Due to its unique electronic band structure, g‐C3N4 exhibits attractive optoelectronic physical properties. In recent years, it has gained significant attention as a photocatalyst with advanced performance. While most of the current research focuses on the field of photo‐electrocatalysis, the material's fascinating optoelectronic physical properties hold great potential in the field of optoelectronic applications. This review highlights the research on the atom‐ and molecule‐modified g‐C3N4’s optoelectronics properties and its application in optoelectronics applications, such as light‐emitting diodes, photovoltaics, and photodetectors, with the aim of attracting more attention from researchers.
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献