Narrow‐Band Blue‐Emitting Indium Phosphide Quantum Dots Induced by Highly Active Zn Precursor

Abstract

AbstractColloidal indium phosphide quantum dots (In(Zn)P/ZnS QDs) show potential for application in the field of light emitting diodes (LED) and Mini/Micro‐LEDs displays due to their tunable emission and low toxicity. However, the performance of blue‐emitting indium phosphide QDs is still lagging behind that of red and green. Herein, a facile method to overcome this difficulty is proposed. The highly active Zn(ClO4)2 precursor is injected into the reaction mixture during the nucleation process to enhance zinc incorporation, which generates the In(Zn)P alloy QDs with enlarged bandgap. At the same time, the increase of zinc content can inhibit excessive growth of In(Zn)P QDs, and significantly improve its size distribution. The monodisperse In(Zn)P/ZnS QDs exhibit excellent blue emission (466 nm) and have the narrowest full width at half maxima (41 nm) of blue emission In(Zn)P QDs ever reported. This work provides a feasible and effective strategy for obtaining narrow‐band blue‐emitting In(Zn)P/ZnS QDs.