Wafer‐Scale Growth of Vertical‐Structured SnSe 2 Nanosheets for Highly Sensitive, Fast‐Response UV–Vis–NIR Broadband Photodetectors-Reference-Cited by-同舟云学术

Wafer‐Scale Growth of Vertical‐Structured SnSe 2 Nanosheets for Highly Sensitive, Fast‐Response UV–Vis–NIR Broadband Photodetectors

Author:

Chen Zhiyong¹²,Xiong Lei¹,Li Guangyuan¹,Wei Lei³^ORCID,Yang Chunlei¹⁴,Chen Ming¹⁴

Affiliation:

1. Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences Shenzhen 518055 P. R. China

2. Department of Nano Science and Technology Institute University of Science and Technology of China Suzhou 215123 P. R. China

3. School of Electrical and Electronic Engineering Nanyang Technological University 50 Nanyang Avenue Singapore 639798 Singapore

4. University of Chinese Academy of Sciences Beijing 100049 P. R. China

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

Reference47 articles.

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