Affiliation:
1. College of Rare Earths Jiangxi University of Science and Technology Ganzhou 341000 P. R. China
2. Faculty of Materials Metallurgy and Chemistry Jiangxi University of Science and Technology Ganzhou 341000 P. R. China
3. Key Laboratory of Rare Earth Luminescence Materials and Devices of Jiangxi Province Jiangxi University of Science and Technology Ganzhou 341000 P. R. China
4. Key Laboratory of Testing and Tracing of Rare Earth Products for State Market Regulation Jiangxi University of Science and Technology Ganzhou 341000 P. R. China
5. National Rare Earth Functional Materials Manufacturing Innovation Centre Ganzhou 341000 P. R. China
Abstract
AbstractCr3+‐activated near‐infrared (NIR) phosphors have gained extensive attention for use in NIR phosphor‐converted light‐emitting diodes (pc‐LEDs), which are required for smart NIR spectroscopy techniques. Nevertheless, obtaining broadband NIR‐emitting phosphors with outstanding thermal stabilities and photoluminescence (PL) efficiencies remains a significant challenge. Herein, considering NaSr2XGe5O14 (X = Al, Ga, Sc, and In) as hosts, which possess a large band gap and multiple sites for the substitution of Cr3+ ions. NaSr2XGe5O14:Cr3+ phosphors are successfully prepared using a solid‐state reaction technology. Upon blue light excitation, the phosphors cover a broad NIR emission band in 650–1100 nm region. Notably, an abnormal blueshift and PL enhancement are observed following the substitution of Al/Ga with Sc/In. In particular, the PL internal quantum efficiency is improved from 34.5% (NaSr2GaGe5O14: Cr3+) to 87.5% (NaSr2ScGe5O14: Cr3+). Moreover, the manufactured NIR pc‐LED exhibited an exceptional photoelectric efficiency of 17.7% with an NIR output power of 10.2 mW at 20 mA, and its potential application in nondestructive detection is demonstrated.
Funder
National Natural Science Foundation of China
Natural Science Foundation of Jiangxi Province
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials