Device Geometry Insights for Efficient Electrically Driven Insulator‐to‐Metal Transition in Vanadium Dioxide Thin‐Films-Reference-Cited by-同舟云学术

Device Geometry Insights for Efficient Electrically Driven Insulator‐to‐Metal Transition in Vanadium Dioxide Thin‐Films

Published:2021-10-04 Issue:1 Volume:8 Page:2100428
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Kabir Sumaiya¹,Nirantar Shruti¹,Monshipouri Mahta¹,Low Mei Xian¹,Walia Sumeet¹²,Sriram Sharath¹³,Bhaskaran Madhu¹³^ORCID

Affiliation:

1. S. Kabir, S. Nirantar, M. Monshipouri, M. X. Low, S. Walia, S. Sriram, M. Bhaskaran Functional Materials and Microsystems Research Group and the Micro Nano Research Facility RMIT University Melbourne VIC 3000 Australia

2. S. Walia School of Engineering RMIT University Melbourne VIC 3000 Australia

3. S. Sriram, M. Bhaskaran ARC Centre of Excellence for Transformative Meta‐Optical Systems RMIT University Melbourne VIC 3000 Australia

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100428

Reference41 articles.

1. Vanadium Dioxide: The Multistimuli Responsive Material and Its Applications

2. Phase change vanadium dioxide light sensors

3. A caloritronics-based Mott neuristor

4. Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions

5. Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide

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