Homogeneous 3D Vertical Integration of Parylene‐C Based Organic Flexible Resistive Memory on Standard CMOS Platform-Reference-Cited by-同舟云学术

Homogeneous 3D Vertical Integration of Parylene‐C Based Organic Flexible Resistive Memory on Standard CMOS Platform

Author:

Chen Qingyu¹,Wang Zongwei¹²^ORCID,Lin Min¹,Qi Xin¹,Yu Zhizhen¹,Wu Lindong¹,Bao Lin¹,Ling Yaotian¹,Qin Yabo¹,Cai Yimao¹³⁴,Huang Ru¹³⁴

Affiliation:

1. Institute of Microelectronics Peking University Beijing 100871 P. R. China

2. Advanced Institute of Information Technology Peking University Hangzhou 311215 P. R. China

3. Innovation Center for Microelectronics and Integrated System Peking University Beijing 100871 P. R. China

4. Frontiers science center for nano‐optoelectronics Peking University Beijing 100871 P. R. China

Funder

Higher Education Discipline Innovation Project

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

Reference45 articles.

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