Affiliation:
1. Quantum Technology Institute Korea Research Institute of Standards and Science (KRISS) 267 Gajeong‐ro Daejeon 34113 Republic of Korea
2. Department of Emerging Materials Science Daegu Gyeongbuk Institute of Science and Technology (DGIST) 333 Techno Jungang‐Daero Daegu 42988 Republic of Korea
Abstract
AbstractTo overcome memory bottleneck issues in memory‐centric chip technologies, in‐memory computing has been considered an alternative route involving simultaneous data storage and computing in a memory network. In the context of spintronics, a memory‐in‐logic device based on spin‐transfer‐torque or spin‐orbit‐torque magnetoresistive random‐access memory, and a magnetic domain wall (DW) racetrack has been studied. To expand the functionalities of a conventional magnetic DW racetrack, the study devises a reprogrammable exchange‐biased DW racetrack with local engineering of the exchange bias field (HE) in continuous magnetic films without requiring a lithography process for specific patterning of the films. Furthermore, current‐driven and field‐driven DW motion along the exchange‐biased racetrack is demonstrated. Additionally, within the route of the locally different exchange‐biased racetrack, a gate function can be performed to guide or stop DW motion by locally tuning HE. The complex maze racetrack is rewritable, and multiple input channels can be controlled.
Funder
Ministry of Science and ICT, South Korea
National Research Foundation of Korea