Stable Al 2 O 3 Encapsulation of MoS 2 ‐FETs Enabled by CVD Grown h‐BN-Reference-Cited by-同舟云学术

Stable Al ₂ O ₃ Encapsulation of MoS ₂ ‐FETs Enabled by CVD Grown h‐BN

Published:2022-04-29 Issue:9 Volume:8 Page:2200123
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Piacentini Agata¹²^ORCID,Marian Damiano³,Schneider Daniel S.¹²,González Marín Enrique⁴,Wang Zhenyu⁵,Otto Martin¹,Canto Bárbara¹⁶,Radenovic Aleksandra⁷,Kis Andras⁵,Fiori Gianluca³,Lemme Max C.¹²,Neumaier Daniel¹⁶^ORCID

Affiliation:

1. Advanced Microelectronic Center Aachen (AMICA) AMO GmbH Otto‐Blumenthal‐Straße 25 52074 Aachen Germany

2. Chair of Electronic Devices RWTH Aachen University Otto‐Blumenthal‐Straße 2 52074 Aachen Germany

3. Dipartimento di Ingegneria dell'Informazione Università di Pisa Via Girolamo Caruso 16 Pisa 56122 Italy

4. Department of Electronics and Computer Technology University of Granada Avenida de la Fuente Nueva S/N Granada 18071 Spain

5. Electrical Engineering Institute École Polytechnique Fédérale de Lausanne (EPFL) Lausanne 1015 Switzerland

6. School of Electrical, Information and Media Engineering Bergische Universität Wuppertal Lise‐Meitner‐Straße 13 42119 Wuppertal Germany

7. Intitute Biotechnology École Polytechnique Fédérale de Lausanne (EPFL) Lausanne 1015 Switzerland

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200123

Reference59 articles.

1. Two-dimensional Materials for Electronic Applications

2. Electric Field Effect in Atomically Thin Carbon Films

3. A Graphene Field-Effect Device

4. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

5. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

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