Photoelectric Dual Response Nonvolatile Memory Device Based on Black Phosphorus Quantum Dots and Fullerene Derivative Composite-Reference-Cited by-同舟云学术

Photoelectric Dual Response Nonvolatile Memory Device Based on Black Phosphorus Quantum Dots and Fullerene Derivative Composite

Published:2021-12-09 Issue: Volume: Page:2101143
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Li Jinyong¹,Hou Jie¹,Zhang Bin¹^ORCID,Chen Yu¹

Affiliation:

1. Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering School of Chemistry and Molecular Engineering East China University of Science and Technology Shanghai 200237 China

Funder

National Natural Science Foundation of China

Shanghai Rising-Star Program

Natural Science Foundation of Shanghai

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202101143

Reference34 articles.

1. Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

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4. Highly Conductive, Scalable, and Machine Washable Graphene‐Based E‐Textiles for Multifunctional Wearable Electronic Applications

5. Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials

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