Low‐Voltage and High Thermal Stability Single‐Element Te Selector with Failed Bit Pruning Operation Enabling Robust Cross‐Point Memory-Reference-Cited by-同舟云学术

Low‐Voltage and High Thermal Stability Single‐Element Te Selector with Failed Bit Pruning Operation Enabling Robust Cross‐Point Memory

Published:2022-10-06 Issue:12 Volume:8 Page:2200870
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Ding Yaxin¹²,An Junjie¹,Shen Jiabin²³,Jia Shujing²³,Guo Jingrui¹,Wang Lingfei¹,Gong Tiancheng¹⁴,Jiang Pengfei¹,Wang Yuan¹,Chen Yuting¹,Zhu Min³,Dou Chunmeng¹,Luo Qing¹⁴^ORCID

Affiliation:

1. Key Laboratory of Microelectronics Devices and Integrated Technology IMECAS Beijing 100029 China

2. The School of Integrated Circuits University of Chinese Academy of Sciences Beijing 100049 China

3. State Key Laboratory of Functional Materials for Informatics SIMIT‐CAS Shanghai 200050 China

4. Shanghai Qi Zhi Institute Shanghai 200003 China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200870

Reference33 articles.

1. The era of hyper-scaling in electronics

2. Third-order nanocircuit elements for neuromorphic engineering

3. A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications

4. Self-rectifying resistive switching phenomena observed in Ti/ZrN/Pt/p-Si structures for crossbar array memory applications

5. Timing Selector: Using Transient Switching Dynamics to Solve the Sneak Path Issue of Crossbar Arrays

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