Heterosynaptic Plasticity and Neuromorphic Boolean Logic Enabled by Ferroelectric Polarization Modulated Schottky Diodes-Reference-Cited by-同舟云学术

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Heterosynaptic Plasticity and Neuromorphic Boolean Logic Enabled by Ferroelectric Polarization Modulated Schottky Diodes

Published:2022-12-28 Issue:3 Volume:9 Page:2201155
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Xi Fengben¹²^ORCID,Grenmyr Andreas¹³^ORCID,Zhang Jiayuan¹³,Han Yi¹²^ORCID,Bae Jin Hee¹,Grützmacher Detlev¹²⁴,Zhao Qing‐Tai¹^ORCID

Affiliation:

1. Peter Grünberg Institute (PGI 9) and JARA‐Fundamentals of Future Information Technologies Forschungszentrum Jülich GmbH 52428 Jülich Germany

2. Faculty of Mathematics, Computer Science and Natural Sciences RWTH Aachen University 52074 Aachen Germany

3. Faculty of Electrical Engineering and Information Technology RWTH Aachen University 52074 Aachen Germany

4. Peter Grünberg Institute (PGI 10) and JARA‐Fundamentals of Future Information Technologies Forschungszentrum Jülich GmbH 52428 Jülich Germany

Funder

Bundesministerium für Bildung und Forschung

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202201155

Reference65 articles.

1. In-memory computing with resistive switching devices

2. Complementary resistive switches for passive nanocrossbar memories

3. Power-efficient neural network with artificial dendrites

4. Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

5. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

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1. Electrolyte‐Gated Transistor Array (20 × 20) with Low‐Programming Interference Based on Coplanar Gate Structure for Unsupervised Learning;Small Science;2024-03-03

2. Engineered Vertically Stacked NSFET Charge-Trapping Synapse for Neuromorphic Applications;ACS Applied Electronic Materials;2023-12-04

3. Heterosynaptic Plasticity in a Vertical Two-Terminal Synaptic Device;Nano Letters;2023-07-06

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