Structural Analysis and Performance in a Dual‐Mechanism Conductive Filament Memristor-Reference-Cited by-同舟云学术

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Structural Analysis and Performance in a Dual‐Mechanism Conductive Filament Memristor

Published:2021-08-25 Issue:10 Volume:7 Page:2100605
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Tsai Shu‐Chin¹²,Lo Hong‐Yang¹²,Huang Chih‐Yang¹²,Wu Min‐Ci¹²,Tseng Yi‐Tang¹²,Shen Fang‐Chun¹²,Ho An‐Yuan¹²,Chen Jui‐Yuan³,Wu Wen‐Wei¹²⁴^ORCID

Affiliation:

1. Department of Materials Science and Engineering National Chiao Tung University Hsinchu 30010 Taiwan

2. Department of Materials Science and Engineering National Yang Ming Chiao Tung University Hsinchu 30010 Taiwan

3. Department of Materials Science and Engineering National United University Miaoli 36063 Taiwan

4. Center for the Intelligent Semiconductor Nano‐system Technology Research Hsinchu 30078 Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100605

Reference46 articles.

1. Self-Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors

2. Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction

3. Neuromorphic nanoelectronic materials

4. A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments

5. Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory

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