Contact Resistivity in Edge‐Contacted Graphene Field Effect Transistors-Reference-Cited by-同舟云学术

Contact Resistivity in Edge‐Contacted Graphene Field Effect Transistors

Published:2022-01-13 Issue:5 Volume:8 Page:2101169
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Lee Sungwon¹,Choi Hyungyu¹,Moon Inyong¹,Shin Hoseong¹,Watanabe Kenji²,Taniguchi Takashi²,Yoo Won Jong¹^ORCID

Affiliation:

1. Department of Nano Science and Technology SKKU Advanced Institute of Nano‐Technology (SAINT) Sungkyunkwan University 2066 Seobu‐ro, Jangan‐gu Suwon Gyeonggi‐do 16419 Republic of Korea

2. National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202101169

Reference40 articles.

1. Electrical contacts to one- and two-dimensional nanomaterials

2. Substrate Gating of Contact Resistance in Graphene Transistors

3. Ultra-low resistance ohmic contacts in graphene field effect transistors

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