Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High‐Entropy Oxides-Reference-Cited by-同舟云学术

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Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High‐Entropy Oxides

Published:2021-04-15 Issue:5 Volume:7 Page:2001258
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Ahn Minhyung¹,Park Yongmo¹,Lee Seung Hwan¹,Chae Sieun²,Lee Jihang²,Heron John T.²,Kioupakis Emmanouil²,Lu Wei D.¹,Phillips Jamie D.³^ORCID

Affiliation:

1. Department of Electrical Engineering and Computer Science University of Michigan 1301 Beal Avenue Ann Arbor MI 48109‐2122 USA

2. Department of Materials Science and Engineering University of Michigan 2300 Hayward St Ann Arbor MI 48109‐2117 USA

3. Department of Electrical and Computer Engineering University of Delaware Newark DE 19716 USA

Funder

National Science Foundation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202001258

Reference57 articles.

1. A review of emerging non-volatile memory (NVM) technologies and applications

2. Challenges hindering memristive neuromorphic hardware from going mainstream

3. ReRAM: History, Status, and Future

4. Practical Approach to Programmable Analog Circuits With Memristors

5. The missing memristor found

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1. Tuning the Spin Transition and Carrier Type in Rare‐Earth Cobaltates via Compositional Complexity;Advanced Materials;2024-08-23

2. Perspective: Entropy-stabilized oxide memristors;Applied Physics Letters;2024-08-12

3. Entropy-stabilized oxide: A promising material for artificial neural networks?;Matter;2024-08

4. From fabrication to mechanical properties: exploring high-entropy oxide thin films and coatings for high-temperature applications;Frontiers in Coatings, Dyes and Interface Engineering;2024-07-03

5. Low-Temperature Solution-Based Molybdenum Oxide Memristors;ACS Applied Engineering Materials;2024-01-24

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