Strain Driven Conducting Domain Walls in a Mott Insulator
Author:
Affiliation:
1. Experimental Physics V Center for Electronic Correlations and Magnetism Institute of Physics University of Augsburg 86135 Augsburg Germany
2. Institute of Applied Physics Chisinau Moldova
Funder
Deutsche Forschungsgemeinschaft
Publisher
Wiley
Subject
Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200366
Reference63 articles.
1. Cramming more components onto integrated circuits, Reprinted from Electronics, volume 38, number 8, April 19, 1965, pp.114 ff.
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5. MoS 2 transistors with 1-nanometer gate lengths
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