Precise Layer‐Dependent Electronic Structure of MBE‐Grown PtSe 2-Reference-Cited by-同舟云学术

Precise Layer‐Dependent Electronic Structure of MBE‐Grown PtSe 2

Published:2021-09 Issue:11 Volume:7 Page:2100559
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Zhang Lei¹²^ORCID,Yang Tong²,Sahdan Muhammad Fauzi²³,Arramel ²,Xu Wenshuo¹²,Xing Kaijian⁴,Feng Yuan Ping²³^ORCID,Zhang Wenjing¹,Wang Zhuo¹,Wee Andrew T. S.²³^ORCID

Affiliation:

1. SZU‐NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Institute of Microscale Optoelectronics, Shenzhen University Shenzhen 518060 China

2. Department of Physics National University of Singapore 2 Science Drive 3 Singapore 117542 Singapore

3. Centre for Advanced 2D Materials and Graphene Research Centre National University of Singapore 6 Science Drive 2 Singapore 117546 Singapore

4. ARC Centre for Future Low Energy Electronics Technologies School of Physics and Astronomy Monash University Clayton VIC 3800 Australia

Funder

Shenzhen Peacock Plan

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100559

Reference43 articles.

1. Facile Synthesis of Single Crystal PtSe2Nanosheets for Nanoscale Electronics

2. High-Electron-Mobility and Air-Stable 2D Layered PtSe2FETs

3. Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C

4. Multifunctional Two-Dimensional PtSe2-Layer Kirigami Conductors with 2000% Stretchability and Metallic-to-Semiconducting Tunability

5. Controlled Doping of Wafer‐Scale PtSe 2 Films for Device Application

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