ReS 2 /h‐BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory-Reference-Cited by-同舟云学术

ReS 2 /h‐BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory

Published:2020-11-30 Issue:1 Volume:7 Page:2000925
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Mukherjee Bablu¹^ORCID,Hayakawa Ryoma¹^ORCID,Watanabe Kenji²^ORCID,Taniguchi Takashi¹^ORCID,Nakaharai Shu¹^ORCID,Wakayama Yutaka¹^ORCID

Affiliation:

1. International Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba Ibaraki 305‐0044 Japan

2. Research Center for Functional Materials National Institute for Materials Science (NIMS) 1‐1 Namiki Tsukuba Ibaraki 305‐0044 Japan

Funder

National Institute for Materials Science

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000925

Reference32 articles.

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4. Emerging Opportunities for Electrostatic Control in Atomically Thin Devices

5. Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

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