The Trends of In Situ Focused Ion Beam Technology: Toward Preparing Transmission Electron Microscopy Lamella and Devices at the Atomic Scale-Reference-Cited by-同舟云学术

The Trends of In Situ Focused Ion Beam Technology: Toward Preparing Transmission Electron Microscopy Lamella and Devices at the Atomic Scale

Published:2022-03-30 Issue:9 Volume:8 Page:2101401
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Zhang Zijian¹,Wang Wanting¹,Dong Zuoyuan¹,Yang Xin¹,Liang Fang¹,Chen Xinqian¹,Wang Chaolun¹,Luo Chen²,Zhang Jiayan¹,Wu Xing¹^ORCID,Sun Litao³,Chu Junhao²

Affiliation:

1. In Situ Devices Center, School of Communication and Electronic Engineering East China Normal University 500 Dongchuan Road Shanghai 200241 China

2. Institute of Optoelectronics Fudan University 2005 Songhu Road Shanghai 200438 China

3. SEU‐FEI Nano‐Pico Center, Key Laboratory of MEMS of Ministry of Education Collaborative Innovation Center for Micro/Nano Fabrication, Device and System Southeast University Nanjing 210096 China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202101401

Reference117 articles.

1. Mechanism for mitigating filler-induced reliability degradation in semiconductor devices assembled utilizing an LOC package technique

2. Increasing the reliability of wind turbines using condition monitoring of semiconductor devices: a review

3. Enhance Reliability of Semiconductor Devices in Power Converters

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