Deep‐Submicrometer Complementary Metal‐Oxide‐Semiconductor Transistors Based on Carbon Nanotube Films-Reference-Cited by-同舟云学术

Deep‐Submicrometer Complementary Metal‐Oxide‐Semiconductor Transistors Based on Carbon Nanotube Films

Published:2021-11-07 Issue: Volume: Page:2100751
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Shi Huiwen¹²,Ding Li¹,Zhong Donglai¹,Peng Lian‐Mao¹²,Zhang Zhiyong¹^ORCID

Affiliation:

1. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon‐Based Electronics Department of Electronics Peking University Beijing 100871 China

2. Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100751

Reference40 articles.

1. Toward High-Performance Digital Logic Technology with Carbon Nanotubes

2. Carbon Nanotubes for High-Performance Electronics—Progress and Prospect

3. K. J.Kuhn U.Avci A.Cappellani M. D.Giles M.Haverty S.Kim R.Kotlyar S.Manipatruni D.Nikonov C.Pawashe inInt. Electron Devices Meeting San Francisco Dec2012 pp. 1–8.

4. Carbon nanotube transistors scaled to a 40-nanometer footprint

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