Demonstration of PdSe <sub>2</sub> CMOS Using Same Metal Contact in PdSe <sub>2</sub> n‐/p‐MOSFETs through Thickness‐Dependent Phase Transition-Reference-Cited by-同舟云学术

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Demonstration of PdSe ₂ CMOS Using Same Metal Contact in PdSe ₂ n‐/p‐MOSFETs through Thickness‐Dependent Phase Transition

Published:2022-07-20 Issue:11 Volume:8 Page:2200485
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Seo Jae Eun¹,Park Eunpyo²,Das Tanmoy¹,Kwak Joon Young²,Chang Jiwon¹^ORCID

Affiliation:

1. Department of System Semiconductor Engineering and Department of Materials Science and Engineering Yonsei University Seoul 03722 Republic of Korea

2. Center for Neuromorphic Engineering Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea

Funder

National Research Foundation of Korea

Yonsei University

Ministry of Science, ICT and Future Planning

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200485

Reference57 articles.

1. A roadmap for graphene

2. Graphene: Status and Prospects

3. Graphene transistors

4. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

5. Ultrafast graphene photodetector

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of Contact Resistance and 3D Integration of 2D Material Field‐Effect Transistors Using Semi‐Metallic PtSe₂ Contacts;Advanced Functional Materials;2024-08-02

2. Controllable Phase Transformation by Van der Waals Encapsulation in Electrochemically Exfoliated PdSe₂ Nanosheets;Advanced Functional Materials;2024-04-03

3. Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors;Nanomaterials;2024-03-06

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