Ion Gel‐Gated Quasi‐Solid‐State Vertical Organic Electrochemical Transistor and Inverter

Author:

Jeong Sang Young1,Moon Jung Woo2,Lee Soonyong1,Wu Ziang1,Park Sung Hyeon2,Cho Jeong Ho2,Woo Han Young1ORCID

Affiliation:

1. Department of Chemistry Korea University Seoul 02841 Republic of Korea

2. Department of Chemical and Biomolecular Engineering Yonsei University Seoul 03722 Republic of Korea

Abstract

AbstractParallel‐type organic electrochemical transistors (p‐OECTs) with aqueous electrolyte gate dielectrics have been widely studied for transducing biological signals into electrical signals. However, aqueous liquid electrolyte‐based p‐OECTs suffer from poor device stability, low transconductance (gm), and limited applications. In this study, a quasi‐solid‐state ion gel‐gated vertical‐type OECT (v‐OECT) and NOT logic gate are successfully demonstrated by combining both p‐type and n‐type v‐OECTs for the first time. Indacenodithiophene (IDT) polymers with alkyl (PIDTC16‐BT) and oligoethylene glycol (OEG) substituents (PIDTPEG‐BT) are studied as a channel material, and an ionic liquid in a crosslinked polymer matrix is adopted as a quasi‐solid electrolyte. Compared to aqueous devices, an enlarged electrochemical window and improved operational stability are observed. Notably, the v‐OECTs have a significantly larger channel area (50 × 50 µm2) and shorter channel length (≈30 nm), yielding a dramatically increased gm. As‐spun PIDTC16‐BT films exhibit a noticeably higher gm of 72.8 mS than that of previous p‐OECTs along with superior device stability, despite a low volumetric capacitance. In the case of v‐OECTs, face‐on intermolecular packing is required to increase the carrier transport in a vertical direction. Logic gates are successfully demonstrated using p‐ and n‐type v‐OECTs, suggesting the potential of OECT‐based next‐generation electronics.

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

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