Self‐Aligning Metallic Vertical Interconnect Access Formation through Microlensing Gas Phase Electrodeposition controlling Airgap and Morphology-Reference-Cited by-同舟云学术

Self‐Aligning Metallic Vertical Interconnect Access Formation through Microlensing Gas Phase Electrodeposition controlling Airgap and Morphology

Published:2022-10-17 Issue:1 Volume:9 Page:2200838
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Schlag Leslie¹,Isaac Nishchay A.¹,Hossain Mohammad M.¹,Hess Anna‐Lena¹,Wolz Benedikt C.²,Reiprich Johannes¹,Ziegler Mario³,Pezoldt Jörg¹,Jacobs Heiko O.¹^ORCID

Affiliation:

1. Technische Universität Ilmenau Institut für Mikro und Nanotechnologie Fachgebiet Nanotechnologie Gustav‐Kirchhoff‐Str. 1 98693 Ilmenau Germany

2. Institut für Nanotechnologie und korrelative Mikroskopie INAM Forchheim Äußere Nürnberger Str. 62 91301 Forchheim Germany

3. Leibniz Institut für Photonische Technologien IPHT Jena Albert‐Einstein‐Str. 9 07745 Jena Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200838

Reference26 articles.

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2. GAAFET Versus Pragmatic FinFET at the 5nm Si-Based CMOS Technology Node

3. D.Park inProceedings ‐ IEEE International SOI Conference 2006 https://ieeexplore.ieee.org/abstract/document/4062919.

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