Anion‐Vacancy‐Defect Passivation of a 2D‐Layered Tin‐Based Perovskite Thin‐Film Transistor with Sulfur Doping
Author:
Affiliation:
1. School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Republic of Korea
2. Department of Chemical Engineering Pohang University of Science and Technology 77 Cheongam‐Ro Nam‐Gu Pohang 37673 Republic of Korea
Funder
National Research Foundation of Korea
Publisher
Wiley
Subject
Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202201014
Reference43 articles.
1. Halide Perovskites for Applications beyond Photovoltaics
2. A Review of the Role of Solvents in Formation of High-Quality Solution-Processed Perovskite Films
3. Review on recent progress of lead-free halide perovskites in optoelectronic applications
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5. Two-dimensional organic–inorganic hybrid perovskite field-effect transistors with polymers as bottom-gate dielectrics
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