Gate‐Tunable Negative Differential Resistance in Next‐Generation Ge Nanodevices and their Performance Metrics-Reference-Cited by-同舟云学术

Gate‐Tunable Negative Differential Resistance in Next‐Generation Ge Nanodevices and their Performance Metrics

Published:2021-01-25 Issue:3 Volume:7 Page:2001178
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Böckle Raphael¹^ORCID,Sistani Masiar¹^ORCID,Eysin Kilian¹,Bartmann Maximilian G.¹^ORCID,Luong Minh Anh²^ORCID,den Hertog Martien I.³^ORCID,Lugstein Alois¹^ORCID,Weber Walter M.¹^ORCID

Affiliation:

1. Institute of Solid State Electronics Technische Universität Wien Vienna 1040 Austria

2. Univ. Grenoble Alpes Alternative Energies and Atomic Energy Commission IRIG‐DEPHY‐MEM‐LEMMA Grenoble F‐38000 France

3. Institut NEEL CNRS/UGA UPR2940 Grenoble F‐38042 France

Funder

Austrian Science Fund

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202001178

Reference46 articles.

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