InGaZnO Tunnel and Junction Transistors Based on Vertically Stacked Black Phosphorus/InGaZnO Heterojunctions-Reference-Cited by-同舟云学术

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InGaZnO Tunnel and Junction Transistors Based on Vertically Stacked Black Phosphorus/InGaZnO Heterojunctions

Published:2020-07-15 Issue:8 Volume:6 Page:2000291
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Bi Jiahe¹,Zou Xuming¹,Lv Yawei¹,Li Guoli¹,Liu Xingqiang¹,Liu Yuan¹,Yu Ting²,Yang Zhenyu³,Liao Lei¹^ORCID

Affiliation:

1. State Key Laboratory for Chemo/Biosensing and ChemometricsSchool of Physics and ElectronicsHunan University Changsha 410082 China

2. Division of Physics and Applied PhysicsSchool of Physical and Mathematical SciencesNanyang Technological University Singapore 637371 Singapore

3. College of Microtechnology & NanotechnologyQingdao University Qingdao 266071 China

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000291

Reference43 articles.

1. Corrugated Heterojunction Metal-Oxide Thin-Film Transistors with High Electron Mobility via Vertical Interface Manipulation

2. Copper Substrate Electrode for Efficient Top-illuminated Organic Photovoltaics

3. Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

4. Bulk Accumulation a-IGZO TFT for High Current and Turn-On Voltage Uniformity

5. High Photosensitive Indium–Gallium–Zinc Oxide Thin-Film Phototransistor with a Selenium Capping Layer for Visible-Light Detection

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4. Dual-Junctions Field Effect Transistor Based on MoS₂/Te/MoS₂;IEEE Transactions on Electron Devices;2023-06

5. Modulating the Function of GeAs/ReS₂ van der Waals Heterojunction with its Potential Application for Short‐Wave Infrared and Polarization‐Sensitive Photodetection;Small;2023-05-08

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